C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 14/35 (2006.01) C23C 14/34 (2006.01) H01J 37/34 (2006.01)
Patent
CA 2093635
A target (40), of a thick- ness that varies across its radius according to the amount of ma- terial required to be sputtered, is supported in a nest (42) in a chamber (10) of a sputter coat- ing apparatus. A closed loop permanent or electromagnet strip (80), preferably a flexible permanent magnet, is fixed to a magnet carrier (55) that rotates behind the nest about the target center axis. Portions of the magnet are near the rim of the target and portions are near, but not on, the target center. One pole of the magnet faces the target rim and one faces the target center axis so that its field will enclose the target rim within a magnetic tunnel that traps a plasma over the target. Lumped magnets (90, 91, 92) across the center from the strip support the plasma near the center so as to cause some sputtering at the target center. Other lumped magnets (95, 96, 97, 98) adjacent the strip help sharpen the field so that a desired distribution of sputtering can be achieved. Enclosed in a sealed space (44) behind and in thermal contact with the target nest is the carrier from which the magnets project to facilitate the flow of cooling fluid across the back surface of the nest to cool the target as the carrier rotates.
Hieronymi Robert
Hurwitt Steven D.
Wagner Israel
Macrae & Co.
Materials Research Corporation
Tokyo Electron Limited
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