Manufacture of high purity low arsenic anhydrous hydrogen...

Details Manufacture of high purity low arsenic anhydrous hydrogen... Manufacture of high purity low arsenic anhydrous hydrogen...

C - Chemistry, Metallurgy

01

B

23/180

C01B 7/19 (2006.01)

Patent

CA 1314382

MANUFACTURE OF HIGH PURITY LOW ARSENIC ANHYDROUS HYDROGEN FLUORIDE ABSTRACT OF THE INVENTION A process for manufacturing high purity anhydrous hydrogen fluoride (HF) having low levels of arsenic impurity by contacting anhydrous hydrogen fluoride product, or an intermediate product obtained during the manufacture of HF, with hydrogen peroxide to oxidize the arsenic impurity is the presence of a catalyst which comprises a catalytic amount of a component selected from the group consisting of molybdenum, a molybdenum compound, vanadium, and a vanadium compound, and a phosphate compound. The volatile trivalent arsenic impurity is the anhydrous hydrogen fluoride is oxidized to a non-volatile pentavalent arsenic compound and the resultant mixture is distilled to recover high purity anhydrous hydrogen fluoride with reduced levels of arsenic impurity. In one embodiment, an oxidizing agent such as nitric acid or a nitrate salt is added to the reaction mixture to oxidize organic compounds. 6351k

605017

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