Manufacturing method for semiconductor photoelectrochemical...

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H01L 31/04 (2006.01) C23C 8/10 (2006.01) H01L 31/18 (2006.01) H01M 14/00 (2006.01)

Patent

CA 2554913

The invention provides a manufacturing method for a semiconductor photoelectrochemical cell, comprising the steps of burning a base made of titanium or a titanium alloy in an atmosphere of 700°C to 1000°C at a rate of temperature increase of no lower than 5°C/second so that a titanium oxide layer is formed on the surface, and thus, mixing titanium metal into said titanium oxide layer.

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