Masking techniques in chemical vapor deposition

Details Masking techniques in chemical vapor deposition Masking techniques in chemical vapor deposition

H - Electricity

01

S

345/32, 117/64

H01S 5/223 (2006.01) C23C 16/04 (2006.01) C30B 25/04 (2006.01) H01S 5/227 (2006.01)

Patent

CA 1194196

ABSTRACT OF THE INVENTION Various mask configurations and techniques tor their employment in a chemical vapor deposition system are disclosed These masks can be utilized in the fabrication of semiconductor devices. The masks have at least one aperture therein and may he either removed after device processing or formed as an integral part of the semiconductor device being fabrication. In either case semiconductor devices can be formed with one or more layers characterized by desired spatial variations in their thickness and/or contour. The integral masking techniques provide for incorporated self alignment which simplifies device processing. The fabrication or semiconductor injection lasers are disclosed as examples or applications of the masking techniques.

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