Member for semiconductor device

Details Member for semiconductor device Member for semiconductor device

H - Electricity

01

L

H01L 23/36 (2006.01) H01L 23/04 (2006.01) H01L 23/06 (2006.01) H01L 23/373 (2006.01)

Patent

CA 2485419

A member for a semiconductor device which has, as a base material (1), an alloy or a composite material comprising Cu and W and/or Mo as a main component, an alloy or a composite material comprising Al-SiC as a main component, and an alloy or a composite material comprising Si-SiC as a main component, and also has a coating layer comprising a hard carbon film (2) formed on the surface of the base material (1) for the joining by the use of a resin of at least another member such as a package. The base material (1) preferably has a surface roughness of 0.1 to 20 µm in terms of Rmax, and the hard carbon film (2) preferably has a thickness of 0.1 to 10 µm. The above member for a semiconductor device, such as a substrate, is improved in the joining strength in joining with a resin and is capable of retaining high strength in joining with a resin after a reliability test such as a temperature cycle test, that is, exhibits excellent characteristics for the joining with a resin.

L'invention concerne un élément de dispositif semi-conducteur comprenant, en tant que matériau de base (1), un alliage ou un matériau composite contenant du Cu et du W et/ou en tant que composant principal, un alliage ou un matériau composite contenant du Al-SiC en tant que composant principal, et un alliage ou un matériau composite contenant du Si-SiC en tant que composant principal, ainsi qu'une couche de revêtement contenant un film de carbone dur (2) formé sur la surface du matériau de base (1), afin d'assurer la jonction, au moyen d'une résine avec un autre élément tel qu'un boîtier. Le matériau de base (1) possède de préférence, une rugosité de surface de 0,1 à 20 µm en termes de Rmax, et le film de carbone dur (2) possède, de préférence, une épaisseur comprise entre 0,1 et 10 µm. Dans cet élément pour dispositif semi-conducteur, tel qu'un substrat, la force de jonction est améliorée grâce à la résine, cette force de jonction étant maintenue après un test de fiabilité, tel qu'un test à cycle de températures, démontrant, par conséquent, une très bonne caractéristique de jonction avec la résine.

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