Method and apparatus for etching a semiconductor wafer

Details Method and apparatus for etching a semiconductor wafer Method and apparatus for etching a semiconductor wafer

H - Electricity

01

L

H01L 21/302 (2006.01) H01J 37/32 (2006.01) H01L 21/3065 (2006.01) H01L 21/3213 (2006.01) H01L 21/02 (2006.01)

Patent

CA 2259972

A method and apparatus (6) provides for etching a semiconductor wafer (40) using a two step physical etching and chemical etching process in order to create vertical sidewalls (20) required for high density DRAMs and FRAMs.

L'invention concerne un procédé et un appareil (6) pour attaquer une tranche de semi-conducteur (40) à l'aide d'un processus d'attaque physique et d'attaque chimique en deux étapes en vue de créer les parois latérales verticales (20) nécessaires aux mémoires DRAM et FRAM haute densité.

Affiliated with

Also associated with

Rating

Method and apparatus for etching a semiconductor wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for etching a semiconductor wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for etching a semiconductor wafer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-2042287