Method and apparatus for growing silicon carbide crystals

Details Method and apparatus for growing silicon carbide crystals Method and apparatus for growing silicon carbide crystals

C - Chemistry, Metallurgy

30

B

C30B 25/00 (2006.01) C30B 23/00 (2006.01) C30B 29/36 (2006.01)

Patent

CA 2385621

A method and apparatus for controlled, extended and repeatable growth of high quality silicon carbide boules of a desired polytype is disclosed which utilizes graphite crucibles coated with a thin coating of a metal carbide and in particular carbides selected from the group consisting of tantalum carbide, hafnium carbide, niobium carbide, titanium carbide, zirconium carbide, tungsten carbide and vanadium carbide.

La présente invention concerne un procédé et un appareil de tirage contrôlé, prolongé et reproductible de lingots monocristallins de carbure de silicium d'une polytypie désirée utilisant des creusets en graphite recouverts d'une mince couche d'un carbure métallique et notamment des carbures choisis parmi le groupe constitué du carbure de tantale, du carbure d'hafnium, du carbure de niobium, du carbure de titane, du carbure de zirconium, du carbure de tungstène et du carbure de vanadium.

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