Method and device for activating semiconductor impurities

Details Method and device for activating semiconductor impurities Method and device for activating semiconductor impurities

H - Electricity

01

L

H01L 21/265 (2006.01) H01L 21/04 (2006.01) H01L 21/268 (2006.01) H01L 29/861 (2006.01) H01L 29/24 (2006.01)

Patent

CA 2278578

A method for activating semiconductor impurities, which comprises irradiating an impurity-doped SiC substrate (1) or thin film (2) either with laser beams (5) having a wavelength greater than the one which causes the band edge absorption of the semiconductor, or with laser beams (5) having a wavelength which causes the same absorption as a result of the vibration of the bond between the impurity element and the element constituting the semiconductor, for example, a wavelength of 9-11 µm. In particular, when SiC is doped with Al, the irradiation is effected with laser beams (5) having a wavelength of 9.5 - 10 µm.

L'invention porte sur un procédé d'activation d'impuretés dans des semi-conducteurs, ce procédé consistant à irradier un substrat (1) ou un film mince (2) de SiC dopé d'impuretés par des faisceaux (5) laser ayant une longueur d'onde supérieure à celle qui provoque l'absorption de l'extrémité de la bande du semi-conducteur, ou par des faisceaux (5) laser ayant une longueur d'onde qui provoque la même absorption suite à la vibration de la bande entre l'élément d'impureté et l'élément constituant le semi-conducteur, par exemple, une longueur d'onde comprise entre 9 et 11 µm. Notamment lorsque SiC est dopé avec Al, l'irradiation est effectuée par des faisceaux (5) laser ayant une longueur d'onde comprise entre 9,5 et 10 µm.

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