Method and target for sputter depositing thin film

Details Method and target for sputter depositing thin film Method and target for sputter depositing thin film

C - Chemistry, Metallurgy

23

C

204/96.3, 204/16

C23C 14/50 (2006.01) C23C 14/00 (2006.01) C23C 14/34 (2006.01) G11B 5/85 (2006.01)

Patent

CA 1313842

METHOD AND TARGET FOR SPUTTER DEPOSITING THIN FILMS Abstract A sputtering target has a sputtering surface with first and second regions of respective first and second materials. The first region comprises a surface of a first member of the first material, such as of a circular cobalt plate. The se- cond region comprises a surface of a second member of the se- cond material, such as a platinum ring. A cobalt cover ring clamps the platinum ring to the cobalt plate. By varying the relative sizes of the first and second regions, as by changing the size of the cover ring to expose more or less of the platinum ring, the concentration of the two materuals in a layer deposited from the target onto substrates is varied. In addition, by imparting planetary motion to substrates during deposition and sizing and positioning the exposed por- tion of the platinum ring, a radial coercivity gradient is established in the layer deposited on the substrates.

615917

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