Method for accelerated test of semiconductor devices

Details Method for accelerated test of semiconductor devices Method for accelerated test of semiconductor devices

G - Physics

01

R

G01R 31/26 (2006.01) G11C 29/50 (2006.01)

Patent

CA 2216415

A method for an accelerated test of semiconductor devices comprises the steps of determining a relational expression t1 = t2m between an information holding lifetime t1 at a temperature T1 and another lifetime t2 at another temperature T2, expressing the exponent m as a function of the temperature that is proportional to the Boltzmann's factor, and calculating the information holding lifetime t2 at the temperature T2 on the basis of the information holding lifetime t1 at the temperature T1 using the relational expression.

Une méthode d'un test accéléré de dispositifs semiconducteurs regroupe les étapes de détermination d'un expression relationnelle t1 = t2m entre une durée de vie t1 de maintien de l'information à une température T1 et une autre durée de vie t2 à une autre température T2; de détermination de l 'exposant m en fonction de la température qui est proportionnelle au facteur de Boltzmann; et de calcul au moyen de l'expression relationnelle.de la durée de vie de maintien de l'information t2 à la température T2 d'après la durée de vie de maintien de l'information t1 à la température T1.

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