Method for forming a deposited film

Details Method for forming a deposited film Method for forming a deposited film

C - Chemistry, Metallurgy

30

B

148/2.1

C30B 25/00 (2006.01) C23C 16/02 (2006.01) C23C 16/24 (2006.01) C23C 16/30 (2006.01) H01L 21/205 (2006.01) H01L 21/31 (2006.01) H01L 21/84 (2006.01)

Patent

CA 1320102

ABSTRACT OF THE DISCLOSURE A method for forming a deposited film comprises the step of introducing a starting material (A) which is either one of a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidative action on said starting material into a film forming space in which a substrate having a material which becomes crystal neclei for a deposited film to be formed or a material capable of forming crystal nuclei selectively scatteringly on its surface is previously arranged to have said starting material (A) adsorbed onto the surface of said substrate to form an adsorbed layer (I) and the step of introducing a starting material (B) which is the other one into said film forming space, thereby causing surface reaction on said adsorption layer (I) to form a crystalline deposited film (1).

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