Method for heteroepitaxial growth of high-quality n-face...

Details Method for heteroepitaxial growth of high-quality n-face... Method for heteroepitaxial growth of high-quality n-face...

C - Chemistry, Metallurgy

30

B

C30B 25/18 (2006.01) C30B 29/38 (2006.01) H01L 21/20 (2006.01)

Patent

CA 2669228

Methods for the heteroepitaxial growth of smooth, high quality films of N- face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as disclosed herein. The present invention also avoids the typical large (µm sized) hexagonal features which make N-face GaN material unacceptable for device applications. The present invention allows for the growth of smooth, high quality films which makes the development of N-face devices possible.

L'invention concerne des procédés pour la croissance hétéroépitaxiale de films lisses de haute qualité, constitués d'un film de GaN à face N mis à croître par MOCVD. L'utilisation d'un substrat non orienté et la nitruration possible du substrat permettent la croissance de films lisses de GaN à face N et d'autres films de nitrure du groupe III, tels que décrit par les présentes. Cette invention évite également les grandes caractéristiques hexagonales typiques (dimension de l'ordre de µm) qui rendent le matériau de GaN à face N inacceptable pour des applications de dispositif. La présente invention permet la croissance de films lisses de haute qualité qui rendent possible le développement de dispositifs à face N.

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