Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

C - Chemistry, Metallurgy

30

B

148/3.5

C30B 29/06 (2006.01) H01L 21/02 (2006.01) H01L 21/324 (2006.01) H01L 21/36 (2006.01) H01L 21/477 (2006.01) H01L 21/8244 (2006.01) H01L 27/11 (2006.01)

Patent

CA 1262522

ABSTRACT OF THE DISCLOSURE The invention relates to a method for manufacturing a semiconductor device with a resistor having a high resistance. In the invention, a first polycrystalline silicon layer is first formed to connect with an electrically connecting portion formed in a semiconductor substrate. Next, a second polycrystalline silicon layer containing oxygen is formed on the first polycrystalline silicon layer. And then, an oxide formed between the two polycrystalline silicon layer is removed by annealing.

496735

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