4. H - Electricity
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Hisayoshi Yamoto

H - Electricity – 01 – L

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Details

Inventor

Country: Japan

Method for manufacturing a semiconductor device

C - Chemistry – Metallurgy – 30 – B
Patent

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Polycrystalline silicon thin film resistors

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Semiconductor device

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Semiconductor device having a passivation layer consisting...

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Semiconductor device with polycrystalline silicon active...

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Patent

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Method for manufacturing a semiconductor device

C - Chemistry – Metallurgy – 30 – B
Patent

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Profile ID: LFCA-PAI-P-352052

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