Semiconductor device

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H - Electricity

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H01L 29/02 (2006.01) H01L 21/205 (2006.01) H01L 29/04 (2006.01) H01L 29/06 (2006.01) H01L 29/08 (2006.01) H01L 29/72 (2006.01) H01L 29/737 (2006.01) H01L 29/74 (2006.01) H01L 31/0368 (2006.01) H01L 31/072 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1136773

ABSTRACT OF THE DISCLOSURE A hetero-junction bipolar transistor or gate controlled switch which is formed generally of a semiconductor substrate, a first region of first conductivity type in the substrate, a second region of second conductivity type in the substrate and adjacent to the first region, a third region of the first conduc- tivity type adjacent to the second region having at least a por- tion on the substrate which is comprised of the same element as the substrate and oxygen, the band gap energy of the portion being larger than that of the second region there being transportation of majority carriers in the first region to the third region; wherein the device provides high current gain, superior switching characteristics, the concentration of current is prevented and wherein a method of forming an emitter having a low resistivity is provided.

333370

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