Semiconductor device with polycrystalline silicon active...

Details Semiconductor device with polycrystalline silicon active... Semiconductor device with polycrystalline silicon active...

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H01L 29/04 (2006.01) H01L 21/30 (2006.01) H01L 21/318 (2006.01) H01L 21/324 (2006.01) H01L 21/84 (2006.01) H01L 23/29 (2006.01) H01L 27/06 (2006.01) H01L 29/78 (2006.01) H01L 29/786 (2006.01)

Patent

CA 1218470

ABSTRACT OF THE DISCLOSURE A thin film semiconductor device with a polycrystalline silicon film forming an active channel region, a source region and a drain region, is encapsulated in a passivation layer which also serves as a source of free hydrogen. Migration of hydrogen into the active region improves the effective carrier mobility, the threshold voltage and the gate voltage of the device by reducing carrier trap density thereof. The passivation layer is activated during annealing to drive hydrogen through porous or transmissive layers of the device to the active region. Effective mobilities of up to 100 cm2/V sec can be achieved in the preferred construction. The semiconductor device can be fabricated in the form of IC chips.

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