Method for manufacturing variable capacitance pressure...

Details Method for manufacturing variable capacitance pressure... Method for manufacturing variable capacitance pressure...

H - Electricity

01

G

356/200, 356/25

H01G 5/16 (2006.01) G01L 9/00 (2006.01)

Patent

CA 1153833

- 16 - ABSTRACT A method for manufacturing variable capacitance pressure transducers and an intermediate article of manufacture produced in the practice of this method. In the method, a wafer or doped silicon or other semiconductor material has portions of the semiconductor material removed from spaced areas to form a plurality of recesses in the surface of the semiconductor material. The material is doped to enhance its electrical conductivity. A dielectric material has one of its surfaces coated with spaced areas of electrically conductive material. The semiconductor material is attached to the coated surface of the dielectric material such that the surface recesses in the semiconductor material are in alignment with the conductive areas on the dielectric material. This produces a plurality of electrical capacitors suitable for use as pressure transducers. The capacitance of these transducers is varied as a function of changes in one or more fluid pressures acting on the plates of each of the capacitors, one of these plates being the doped semiconductor material and the other being a conductive area on the dielectric material. Fluid pressure between the plates may be established during manufacture. The intermediate article of manufacture produced by this process may then be cut into a plurality of separate pressure transducers.

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