H - Electricity – 01 – L
Patent
H - Electricity
01
L
204/96.05
H01L 21/311 (2006.01) H01L 21/3105 (2006.01)
Patent
CA 1333059
In a method for planarizing an insulating layer, the height of steps in a layer of insulating material are reduced while tapering side walls of the steps by forming a layer of sacrificial material between the steps and etching the insulating material and the sacrificial material in a low pressure plasma comprising reactive ions and facetting ions. This method combines many of the advantages of Resist Etch Back (REB) and argon facetting techniques while reducing the deleterious effects of macroloading and microloading.
567935
Junkin Charles William
Nortel Networks Limited
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