Method for planarizing an insulating layer

H - Electricity – 01 – L

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

204/96.05

H01L 21/311 (2006.01) H01L 21/3105 (2006.01)

Patent

CA 1333059

In a method for planarizing an insulating layer, the height of steps in a layer of insulating material are reduced while tapering side walls of the steps by forming a layer of sacrificial material between the steps and etching the insulating material and the sacrificial material in a low pressure plasma comprising reactive ions and facetting ions. This method combines many of the advantages of Resist Etch Back (REB) and argon facetting techniques while reducing the deleterious effects of macroloading and microloading.

567935

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Method for planarizing an insulating layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for planarizing an insulating layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for planarizing an insulating layer will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-1314980

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.