Method for planarizing an insulating layer

Details Method for planarizing an insulating layer Method for planarizing an insulating layer

H - Electricity

01

L

204/96.05

H01L 21/311 (2006.01) H01L 21/3105 (2006.01)

Patent

CA 1333059

In a method for planarizing an insulating layer, the height of steps in a layer of insulating material are reduced while tapering side walls of the steps by forming a layer of sacrificial material between the steps and etching the insulating material and the sacrificial material in a low pressure plasma comprising reactive ions and facetting ions. This method combines many of the advantages of Resist Etch Back (REB) and argon facetting techniques while reducing the deleterious effects of macroloading and microloading.

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