Method for providing a metal silicide layer on a substrate

Details Method for providing a metal silicide layer on a substrate Method for providing a metal silicide layer on a substrate

H - Electricity

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356/162

H01L 21/36 (2006.01) H01L 21/28 (2006.01) H01L 21/285 (2006.01) H01L 29/49 (2006.01)

Patent

CA 1100648

METHOD FOR PROVIDING A METAL SILICIDE LAYER ON A SUBSTRATE Abstract of the Disclosure A method for providing on a substrate a layer of a metal silicide such as molybdenum silicide and/or tantalum silicide and/or tungsten silicide and/or rhodium silicide which includes coevaporating silicon and the respective metal onto a substrate, and then heat treating the substrate to form the metal silicide.

301740

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