H - Electricity – 01 – L
Patent
H - Electricity
01
L
148/1, 117/86
H01L 21/205 (2006.01) H01L 21/302 (2006.01) H01L 21/3105 (2006.01) H01L 21/74 (2006.01) H01L 21/762 (2006.01) H01L 21/763 (2006.01)
Patent
CA 1273274
ABSTRACT A chemical-mechanical (chem-mech) method for removing SiO2 protuberances at the surface of a silicon chip, such protuberances including "bird heads". A thin etch stop layer of Si3N4 is deposited onto the wafer surface, which is then chem-mech polished with a SiO2 water based slurry. The Si3N4 acts as a polishing or etch stop barrier layer only on the planar portions of the wafer surface. The portions of the Si3N4 layer located on the top and at the sidewalls of the "bird' heads" and the underlying SiO2 protuberances are removed to provide a substan- tially planar integrated structure.
508583
Beyer Klaus D.
Makris James S.
Mendel Eric
Nummy Karen A.
Ogura Seiki
International Business Machines Corporation
Saunders Raymond H.
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