Method for selectively depositing refractory metal on...

Details Method for selectively depositing refractory metal on... Method for selectively depositing refractory metal on...

C - Chemistry, Metallurgy

23

C

117/64, 117/83,

C23C 16/04 (2006.01) C23C 16/08 (2006.01) C23C 16/14 (2006.01) H01L 21/285 (2006.01) H01L 21/3065 (2006.01) H01L 21/443 (2006.01) H01L 21/467 (2006.01) H01L 21/768 (2006.01)

Patent

CA 2003137

METHOD FOR SELECTIVELY DEPOSITING REFRACTORY METAL ON SEMICONDUCTOR SUBSTRATES Abstract of the Invention A method for selectively depositing refractory metal (for example tungsten) on the surface of a semiconductor substrate to form an electrical contact, without depositing refractory metal on an adjacent mask layer. Refractory metal halide gas and hydrogen gas are simultaneously flowed through a reaction chamber to deposit the refractory metal on the substrate surface and to a lesser extent on the mask layer. Then the flow of hydrogen is interrupted to cause the refractory metal halide to etch the refractory metal which forms on the mask layer. The deposition and etch steps are repeated until the requisite thickness is deposited. The process may take place in a single reaction chamber, using only refractory metal halide gas and pulsed flow of hydrogen gas. A low resistivity refractory metal layer is produced, and damage to the semiconductor surface is minimized.

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