Method for the epitaxial growth of a semiconductor structure

Details Method for the epitaxial growth of a semiconductor structure Method for the epitaxial growth of a semiconductor structure

H - Electricity

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356/181, 148/2.4

H01L 21/20 (2006.01) H01L 21/36 (2006.01) H01L 29/775 (2006.01) H01S 5/323 (2006.01) H01S 5/34 (2006.01) H01S 5/12 (2006.01) H01S 5/223 (2006.01) H01S 5/227 (2006.01) H01S 5/30 (2006.01) H01S 5/32 (2006.01) H01S 5/40 (2006.01)

Patent

CA 2006266

ABSTRACT A method, and devices produced therewith, for the epi- taxial growth of sub-micron semiconductor structures with at least one crystal plane dependently grown, buried active layer (24) consisting of a III-V compound. The active layer (24) and adjacent embedding layers (23, 25) form a heterostructure produced in a one-step growth process not requiring removal of the sample from the growth chamber inbetween layer depositions. The layers of the structure are grown on a semiconductor substrate (21) having a structured surface exposing regions of different crystal orientation providing growth- and no-growth- planes for the selective growth process. The method allows the production of multiple, closely spaced active layers and of layers consisting of adjoining sections having different physical properties.

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