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Peter Roentgen

H - Electricity – 01 – L

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Country: Switzerland

A titanium nitride diffusion barrier for use in non-silicon...

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Algainp diodes emitting visible light

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Method for the epitaxial growth of a semiconductor structure

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Semiconductor device comprising a layered structure grown on...

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Semiconductor device comprising a layered structure grown on...

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Profile ID: LFCA-PAI-P-1590887

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