H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/203 (2006.01) H01L 21/20 (2006.01) H01L 29/737 (2006.01) H01S 3/08 (2006.01) H01S 5/16 (2006.01) H01S 5/223 (2006.01) H01S 5/32 (2006.01) H01S 5/323 (2006.01) H01L 33/00 (2006.01)
Patent
CA 2062153
SZ 9-91-002 ABSTRACT Semiconductor device (30) such as a laser diode grown on a structured substrate surface having horizontal regions with adjacent inclined sidewall surfaces: the horizontal regions (32o) of standard orientation like (100) or slightly off, the inclined surfaces (32m) misoriented. The layers (33 to 36) forming the device are grown over the structured surface, at least the active layer (34) being of a semiconductor material that assumes ordered or disordered states depending on the orientation or misorientation of the substrate surface. The center section (34a) of the active layer is deposited over a horizontal substrate region (32o), this section thus being in the ordered state and having a lower bandgap energy than terminating sections (34b) grown on inclined substrate regions (32m), therefore having a wider bandgap. The active layer can be terminated in either lateral direction with wider bandgap material whereby devices of a buried structure, with strong carrier confinement, and/or with non-absorbing mirrors, allowing high optical power operation, can be realized.
Bona Gian-Luca
Heuberger Wilhelm
Roentgen Peter
Unger Peter
Barrett B.p.
Bona Gian-Luca
Heuberger Wilhelm
International Business Machines Corporation
Roentgen Peter
LandOfFree
Semiconductor device comprising a layered structure grown on... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device comprising a layered structure grown on..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device comprising a layered structure grown on... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1766508