H - Electricity – 01 – G
Patent
H - Electricity
01
G
H01G 4/30 (2006.01)
Patent
CA 2177987
Method for the manufacture of a stacked-type capacitor consisting of alternating dielectric layers and conducting layers. The dielctric and conducting layers are deposited in succession. The dielectric layers are deposited by polymerization of elements derived from the dissociation, by remote nitrogen plasma, of an organo-siliceous or organo-germanium gas. The conducting layers are formed by deposition of conducting elements derived from the dissociation, by remote nitrogen plasma. of a precursor gas of the conducting elements.
L'invention concerne un procédé de fabrication de condensateur de type empilé constitué d'une alternance de couches diélectriques et de couches conductrices. Les couches diélectriques et conductrices sont déposées successivement. Les couches diélectriques sont déposées par polymérisation d'éléments issus de la dissociation par plasma différé d'azote d'un gaz organo-silicé ou organo-germané et les couches conductrices sont réalisés par dépôt d'éléments conducteurs issus de la dissociation par plasma différé d'azote d'un gaz précurseur des éléments conducteurs.
Compagnie Europeenne de Composants Electroniques - Lcc
Robic
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