Method for the preparation of silicon oxycarbide

Details Method for the preparation of silicon oxycarbide Method for the preparation of silicon oxycarbide

C - Chemistry, Metallurgy

03

C

C03C 10/00 (2006.01) C03C 3/04 (2006.01) C04B 35/56 (2006.01)

Patent

CA 2160428

A method for preparation of silicon oxycarbide that makes possible facile adjustment of the carbon content over a broad range is disclosed. The method comprises curing an organopolysiloxane containing at least two units in each molecule selected from the R1R22SiO1/2 and R1SiO3/2 units and an organopolysiloxane containing at least two SiH units in each molecule at temperatures up to 300°C in the presence of a platinum catalyst. This is followed by heating at 600°C to 1,500°C in an inert atmosphere. R1 represents C2 to C10 alkenyl radicals, and R2 independently represents monovalent organic radicals excluding alkenyl radicals.

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