Method for using a hard mask for critical dimension growth...

Details Method for using a hard mask for critical dimension growth... Method for using a hard mask for critical dimension growth...

H - Electricity

01

L

H01L 21/00 (2006.01) H01L 21/033 (2006.01) H01L 21/308 (2006.01) H01L 21/3213 (2006.01)

Patent

CA 2319188

A method for containing the critical dimension growth of the feature on a semiconductor substrate (56) includes placing a substrate with a hard mask (52) comprised of a reactive metal or an oxidized reactive metal in a chamber and etching the wafer. The method further includes using a hard mask which has a low sputter yield and a low reactivity to the etch chemistry of the process.

L'invention se rapporte à un procédé permettant de limiter la croissance de la dimension critique d'une caractéristique sur un substrat semi-conducteur (56). Ce procédé consiste à placer un substrat associé un masque dur (52) constitué d'un métal réactif ou d'un métal réactif oxydé dans une chambre et à graver la plaquette. Le procédé consiste également à utiliser un masque dur qui présente un faible rendement de pulvérisation et une faible réactivité aux produits chimiques employés pour la gravure.

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