Method of and apparatus for plasma etching

Details Method of and apparatus for plasma etching Method of and apparatus for plasma etching

H - Electricity

05

B

327/72

H05B 7/148 (2006.01) B23K 10/00 (2006.01)

Patent

CA 1037129

METHOD OF AND APPARATUS FOR PLASMA ETCHING Abstract of the Disclosure For plasma etching, to obtain high quality, accurate and reproducible results, the temperature of the plasma gas is measured, conveniently as close as possible to the articles to be etched, variations in the temperature from a desired datum being used to control the RF power supply and thus the RF power fed to the reaction chamber. Extremely quick and accurate control of temperature is provided and this provides accurate and reproducible control of etch rate. The rapid temperature response also enables a quick and accurate preheat cycle to be provided prior to the etching cycle. A particularly useful temperature measuring device is a gas thermometer, with a quartz capillary. - 1 -

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