H - Electricity – 01 – L
Patent
H - Electricity
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L
H01L 21/301 (2006.01) H01L 21/027 (2006.01) H01L 21/302 (2006.01) H01L 21/324 (2006.01) H01L 21/78 (2006.01) H01S 5/02 (2006.01) H01L 21/762 (2006.01)
Patent
CA 2246087
A method of cleaving a semiconductor wafer comprises a deep ion implantation induced selective area exfoliation. The method includes steps of selectively masking the material with a mask having straight edges parallel to natural cleavage planes of the semiconductor material, implanting unmasked regions of the material with light ions of hydrogen or helium, and annealing to cause exfoliation of the material from the implanted regions. As a result of exfoliation, the patterned structure remaining on the wafer and pieces of the exfoliated material have high quality sidewall-facets which provides cleaved facets along the cleavage planes of the material. A method of manufacturing optoelectronic devices and semiconductor laser devices is provided.
Este Grantley Oliver
Mitchell Ian Vaughan
Shepherd Frank Reginald
Simpson Todd William
Fortin Jean-Pierre
Nortel Networks Limited
Northern Telecom Limited
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