Method of controlling wafer etching rates

Details Method of controlling wafer etching rates Method of controlling wafer etching rates

C - Chemistry, Metallurgy

03

C

149/17, 149/28

C03C 15/00 (2006.01) C09K 13/00 (2006.01) H01L 21/306 (2006.01)

Patent

CA 1100395

METHOD OF CONTROLLING SILICON WAFER ETCHING RATES Abstract A method for controlling the etch rate of a quaternary etchant comprising ethylene diamine, water, pyrocatechol and a diazine. The etching rate is catalyzed and controlled by controlling the amount of the diazine present in the etchant. A method for the controlled etching of silicon is also disclosed. Y0977-055

321797

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