Method of etching cavities and apertures in substrates and...

C - Chemistry – Metallurgy – 03 – C

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C03C 15/00 (2006.01) C23F 1/00 (2006.01) C23F 1/02 (2006.01)

Patent

CA 1230285

13 ABSTRACT: Deep cavities and apertures can be obtained with little undercutting (large etching factor) by etching sub- strates in an artificial gravitational field (under the influence of centrifugal or centripetal forces) exerting a force in a direction substantially normal to the substrate surface.

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