C - Chemistry – Metallurgy – 03 – C
Patent
C - Chemistry, Metallurgy
03
C
149/2
C03C 15/00 (2006.01) C23F 1/00 (2006.01) C23F 1/02 (2006.01)
Patent
CA 1230285
13 ABSTRACT: Deep cavities and apertures can be obtained with little undercutting (large etching factor) by etching sub- strates in an artificial gravitational field (under the influence of centrifugal or centripetal forces) exerting a force in a direction substantially normal to the substrate surface.
440408
Kuiken Hendrik K.
Tijburg Rudolf P.
N.v.philips'gloeilampenfabrieken
Van Steinburg C.e.
LandOfFree
Method of etching cavities and apertures in substrates and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of etching cavities and apertures in substrates and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of etching cavities and apertures in substrates and... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1310304