G - Physics – 03 – F
Patent
G - Physics
03
F
G03F 1/00 (2012.01) G02B 5/18 (2006.01) G02B 27/58 (2006.01)
Patent
CA 2197706
A new fabrication method for apodized phase masks, which is applicable for Bragg grating recording by proximity or contact printing, has been developed. The apodized phase mask has a surface-relief grating structure of rectangular shape with a spatially varying relief depth. The new fabrication process realizes this microstructure by combining holographic recording, selective etching technology and the deposition of a variable thickness thin film layer. A first fabrication technique is disclosed, which realizes the apodized phase mask by means of selective etching through a variable thin film layer deposited on a substrate or on an etch stop layer. A second fabrication technique is disclosed which first realizes a conventional phase mask by etching a uniform grating structure into the substrate and then generates the relief depth modulation by deposition of a variable thickness film over the etched structure. Both fabrication methods prove to be easier and simpler to implement than previously existing approaches. They are extremely interesting for industrial fabrication, since they apply well controlled batch processes, which is essential for low cost, and feature a very accurate control and a high reproducibility of the desired apodization profile. Moreover, the proposed technology generates in comparison to previously existing methods apodized phase mask of improved optical perfomance, which reduces efficiently the noise in the spectral response of the recorded Bragg gratings. In addition, a new type of intensity apodizer for the incident beam on the phase mask is disclosed for use with a phase mask of variable diffraction efficiency. The invention covers the new fabrication technology as well as the resulting microstructures of the apodized phase mask.
Capolla Nadia
Ehbets Peter
Poirier Michel
Xu Zhihong
Capolla Nadia
Ehbets Peter
Institut National D'optique
Lasiris Inc.
Poirier Michel
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