Method of forming a nonsilicon semiconductor on insulator...

Details Method of forming a nonsilicon semiconductor on insulator... Method of forming a nonsilicon semiconductor on insulator...

H - Electricity

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L

356/141

H01L 21/31 (2006.01) H01L 21/20 (2006.01)

Patent

CA 2004073

-17- METHOD OF FORMING A NONSILICON SEMICONDUCTOR ON INSULATOR STRUCTURE Abstract of the Invention A method of forming a nonsilicon semiconductor layer on an insulating layer by forming a thin heteroepitaxial layer of nonsilicon semiconductor on a first substrate having a lattice structure which matches that of the heteroepitaxial layer. A first insulating layer is formed on the heteroepitaxial layer. A second insulating layer is formed on the surface of a second substrate. The first and second insulating layers are bonded together to form a unified structure, and the first substrate is etched away. In a preferred embodiment the heteroepitaxial layer is germanium, gallium arsenide or silicon-germanium alloy while the first substrate is silicon, germanium, gallium arsenide or silicon-germanium alloy.

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