Method of forming silicon carbide

Details Method of forming silicon carbide Method of forming silicon carbide

C - Chemistry, Metallurgy

23

C

C23C 16/32 (2006.01) B05D 3/04 (2006.01) C23C 16/02 (2006.01) C23C 16/56 (2006.01) H01L 21/205 (2006.01) H01L 21/329 (2006.01) H01L 27/04 (2006.01)

Patent

CA 2105342

A low temperature CVD method is provided for depositing high quality stoichiometric, poly-crystalline silicon carbide films and for depositing emitter quality, heavily doped silicon carbide films, suitable for application in silicon hetero-junction bipolar transistors. The process is compatible with bipolar-CMOS device processing and comprises pyrolysis of di-tern-butyl silane in an oxygen free ambient, with n-type doping provided. by phosphorus source comprising tert-butyl phosphine. Advantageously oxygen is excluded from the reactant gas mixture and the method includes pre-cleaning the substrate with nitrogen trifluoride and passivating the silicon carbide film with fluorine species from nitrogen trifluoride.

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