4. H - Electricity
  5. 01
  6. L

Sing P. Tay

H - Electricity – 01 – L

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Country: Canada

Forming resistors for integrated circuits

H - Electricity – 01 – C
Patent

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Method of forming silicon carbide

C - Chemistry – Metallurgy – 23 – C
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Nitsinitride and oxidized nitsinitride dielectrics on silicon

H - Electricity – 01 – L
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Forming resistors for integrated circuits

H - Electricity – 01 – C
Patent

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Profile ID: LFCA-PAI-P-1128044

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