Nitsinitride and oxidized nitsinitride dielectrics on silicon

Details Nitsinitride and oxidized nitsinitride dielectrics on silicon Nitsinitride and oxidized nitsinitride dielectrics on silicon

H - Electricity

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H01L 21/318 (2006.01) H01L 21/28 (2006.01) H01L 21/314 (2006.01) H01L 21/321 (2006.01) H01L 29/51 (2006.01)

Patent

CA 1252372

NITSINITRIDE AND OXIDIZED NITSINITRIDE DIELECTRICS ON SILICON Abstract of the Disclosure In an integrated circuit process a composite dielectric layer is formed on a monocrystalline, polycrystalline or amorphous silicon substrate by thermally growing a first silicon nitride layer from a surface layer of the silicon and then depositing a layer of amorphous or polycrystalline silicon. A second nitride layer is thermally grown from the deposited silicon to form a nitride-silicon-nitride, termed nitsinitride, composite dielectric. At least a top layer of the nitsinitride dielectric can be oxidized to produce an alternative composite dielectric, termed oxidized nitsinitride. Variation of the thickness of the dielectric layers and/or repeating the layering process sequence results in composite dielectrics of different thicknesses and dielectric properties. 12

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