C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 14/35 (2006.01) C23C 14/34 (2006.01) C23C 14/54 (2006.01) H01J 37/34 (2006.01)
Patent
CA 2089644
2089644 9203589 PCTABS00011 A bias sputter coating apparatus is provided with a cathode target assembly (30) having a central electrode (70) which is maintainable at an adjustable voltage level which is negative with respect to the chamber anode but positive with respect to the cathode voltage and the bias voltage on the substrate. The apparatus is used to manufacture sputter coated article such as semiconductor wafers (21). The method provides that the voltage on the central electrode is adjusted to a level which improves the ion flux distribution uniformity on the substrate. The electrode voltage is generally optimized in the range of from -8 volts to -20 volts.
Hieronymi Robert
Hurwitt Steven D.
Wagner Isreal
Macrae & Co.
Tokyo Electron Limited
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