Method of making a solar grade silicon wafer

H - Electricity – 01 – L

Patent

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H01L 31/18 (2006.01)

Patent

CA 2684315

A method of making a solar grade silicon wafer is disclosed. In at least some embodiments of this invention, the method includes the follow steps: providing a slurry including a liquid that essentially prevents the oxidation of silicon powder and a silicon powder that is essentially free of oxides; providing a solar grade wafer mold defining an interior for receiving the slurry; introducing the slurry into the solar grade wafer mold; precipitating the silicon powder from the slurry to form a preform of the solar grade silicon wafer; and crystallizing the preform to make the solar grade silicon wafer.

Cette invention a trait à un procédé de fabrication d'une tranche de silicium solaire. Dans au moins certains modes de réalisation de cette invention, le procédé comprend les étapes consistant à : fournir une suspension épaisse comprenant un liquide qui empêche sensiblement l'oxydation de la poudre de silicium et une poudre de silicium qui est sensiblement dépourvue d'oxydes ; fournir un moule à tranche solaire définissant une face intérieure recevant la suspension épaisse ; introduire la suspension épaisse dans le moule à tranche solaire ; précipiter la poudre de silicium présente dans la suspension pour former une préforme de la tranche de silicium solaire ; et cristalliser la préforme pour obtenir la tranche de silicium solaire.

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