C - Chemistry – Metallurgy – 03 – B
Patent
C - Chemistry, Metallurgy
03
B
148/3.8
C03B 33/02 (2006.01)
Patent
CA 1271393
ABSTRACT: A method of obtaining a single crystal of gallium arsenide (GaAs) of semi-insulating type including indium (In) for reducing dislocations, characterized in that this single crystal is formed from a molten bath in which the mass of arsenic (As) with respect to the total mass of arsenic plus gallium (Ga + As) is higher than 45% and lower than 51%, in that indium (In) is introduced in the form of indium arsenide (InAs), the mass of indium arsenide (InAs) with respect to the mass of arsenic plus gallium (Ga + As) is higher than 5% and lower than 10% in such a manner that the single crystal obtained from this molten bath is of p-conductivity type and the concentration of the element indium in the single crystal, which has the formula Ga1-xInAs, is x?0,01, and in that this single crystal is then subjected to a sinter- ing treatment for increasing the level of the deep donors EL2 up to such a value that the single crystal has the properties of a semi-insulator. In this way semi-insulating substrates without dislocations can be made.
492218
Duseaux Marc P.
Martin Sylvie A.
Duseaux Marc P.
Fetherstonhaugh & Co.
Martin Sylvie A.
N.v. Philips Gloeilampenfabrieken
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