H - Electricity – 01 – L
Patent
H - Electricity
01
L
148/3.4
H01L 21/31 (2006.01) C30B 33/00 (2006.01) H01L 21/316 (2006.01) H01L 21/32 (2006.01) H01L 21/76 (2006.01) H01L 21/762 (2006.01)
Patent
CA 1330195
14 ABSTRACT: Method of manufacturing a semiconductor device, in which a silicon wafer is provided at its surface with field oxide regions. A method of manufacturing a semiconductor device, in which a surface (1) of a silicon wafer (2) is locally provided with an oxidation mask (3), whereupon the wafer is subjected to an oxidation treatment by heating it in an oxidizing gas mixture. According to the invention, the wafer is heated during the treatment in the oxidizing gas mixture to a temperature of 950 to 1050°C. Water is then added to the oxidizing gas mixture. The quantity of added water is initially less than 30 % by volume and later larger. Thus, in a comparatively short time a comparatively thick layer of oxide can be formed without defects being formed in silicon lying under the oxide.
553385
Snels Wilhelmina C. E.
Van Der Plas Paulus A.
Fetherstonhaugh & Co.
Koninklijke Philips Electronics N.v.
Snels Wilhelmina C. E.
Van Der Plas Paulus A.
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