Method of manufacturing bi-layered ferroelectric thin film

H - Electricity – 01 – G

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H01G 7/06 (2006.01) C23C 16/40 (2006.01) C23C 18/12 (2006.01) H01L 21/02 (2006.01) H01L 21/316 (2006.01) H01L 21/314 (2006.01)

Patent

CA 2205189

A method of forming a Bi-layered ferroelectric thin film on a substrate with good reproducibility, using a mixed composition of a Bi-containing organic compound and a metal polyalkoxide compound by at least one technique selected from the group consisting of molecular deposition such as CVD, and spincoat-sintering.

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