Method of manufacturing silicon carbide semiconductor device

Details Method of manufacturing silicon carbide semiconductor device Method of manufacturing silicon carbide semiconductor device

H - Electricity

01

L

H01L 21/336 (2006.01) H01L 21/316 (2006.01) H01L 29/12 (2006.01) H01L 29/78 (2006.01)

Patent

CA 2636776

Disclosed is a method for manufacturing a silicon carbide semiconductor device having a small interface state density in the interface region between a gate insulating film (20) and a silicon carbide layer (11). Specifically, an epitaxially grown layer (11) is formed on a 4H-SiC substrate (10), and after that a p well region (12), a source region (13) and a p+ contact region (15) as ion implanted layers are formed by ion implantation. Then, a gate insulating film (20) composed of a silicon oxide film is formed on the p well region (12), the source region (13) and the p+ contact region (15) by thermal oxidation or CVD. After that, a plasma is generated by using an N2O-containing gas, which is a gas containing at least one of oxygen and nitrogen, and the gate insulating film (20) is exposed to the plasma.

La présente invention concerne un procédé de fabrication d~un dispositif semi-conducteur au carbure de silicium présentant une faible densité d~état d~interface dans la zone d~interface entre une pellicule d'isolation de gâchette (20) et une couche de carbure de silicium (11). Spécifiquement, une couche obtenue par croissance épitaxique (11) est disposée sur un substrat (10) 4H-SiC, et après cela une zone de puits (12) de type p, une zone de source (13) et une zone de contact (15) de type p+ comme couches implantées d~ions sont formées par implantation ionique. Ensuite, une pellicule d~isolation de gâchette (20) composée d~une pellicule d~oxyde de silicium est disposée sur la zone de puits (12) de type p, la zone de source (13) et la zone de contact (15) de type p+ par oxydation thermique ou CVD. Ensuite, un plasma est généré en utilisant un gaz contenant du NO2, qui est un gaz contenant de l~oxygène et/ou de l~azote, et la pellicule d~isolation de gâchette (20) est exposée au plasma.

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