Method of producing conductive members on a semiconductor...

Details Method of producing conductive members on a semiconductor... Method of producing conductive members on a semiconductor...

H - Electricity

01

L

356/176

H01L 21/425 (2006.01) H01L 21/285 (2006.01) H01L 21/338 (2006.01)

Patent

CA 2023227

METHOD OF PRODUCING CONDUCTIVE MEMBERS ON A SEMICONDUCTOR SURFACE ABSTRACT Method of forming conductive members on a substrate of GaAs. Silicon is placed on the substrate surface in the desired pattern of the conductive members. The substrate is exposed to a gaseous atmosphere containing WF6. WF6 is reduced by the silicon causing tungsten to selectively deposit on the silicon but not on the exposed GaAs. The substrate is given a rapid thermal annealing treatment which causes the silicon-tungsten elements to form conductive members having a silicon rich layer at the bottom, an intermediate tungsten silicide layer, and a tungsten rich layer at the top. The conductive members form ohmic contacts with underlying heavily doped GaAs and rectifying Schottky barrier contacts with underlying lightly doped GaAs.

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