G - Physics – 03 – F
Patent
G - Physics
03
F
96/177
G03F 7/038 (2006.01)
Patent
CA 2015721
-i- PATENT APPLICATION of LEONARD EDWARD BOGAN, Jr. and KAREN ANN GRAZIANO for METHOD OF USING HIGHLY BRANCHED NOVOLAKS IN PHOTORESISTS DN:88:96 MSA:vjc ABSTRACT OF THE DISCLOSURE A method of using highly branched novolak resins in photoresists is provided. The use of highly branched novolak resins as a film-forming binder component in a photoresist composition has been shown to increase the photospeed and lithographic contrast of the photoresist relative to photoresists containing novolak ploymers having lower degrees of branching. The highly branched novolaks are particularly useful in negative-acting photoresists, and more particularly in negative- acting, acid-hardening photoresists.
Bogan Leonard Edward Jr.
Graziano Karen Ann
Gowling Lafleur Henderson Llp
Rohm And Haas Company
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