Methods of fabricating nitride-based transistors with a cap...

Details Methods of fabricating nitride-based transistors with a cap... Methods of fabricating nitride-based transistors with a cap...

H - Electricity

01

L

H01L 21/335 (2006.01) H01L 21/306 (2006.01) H01L 21/324 (2006.01)

Patent

CA 2572244

An anneal of a gate recess prior to formation of a gate contact, such as a Schottky contact, may reduce gate leakage and/or provide a high quality gate contact in a semiconductor device, such as a transistor. The use of an encapsulation layer during the anneal may further reduce damage to the semiconductor in the gate recess of the transistor. The anneal may be provided, for example, by an anneal of ohmic contacts of the device. Thus, high quality gate and ohmic contacts may be provided with reduced degradation of the gate region that may result from providing a recessed gate structure as a result of etch damage in forming the recess.

Selon l'invention, une opération de recuit d'un logement de grille réalisée préalablement à la formation d'un contact de grille, tel qu'un contact de Schottky, peut réduire une fuite de la grille et/ou fournir un contact de grille de grande qualité dans un dispositif semiconducteur, tel qu'un transistor. L'utilisation d'une couche d'encapsulation pendant l'opération de recuit peut limiter davantage une détérioration du semiconducteur dans le logement de grille du transistor. Le recuit peut être, par exemple, un recuit de contacts ohmiques du dispositif qui donne ainsi des contacts de grille et des contacts ohmiques de grande qualité, ce qui limite une dégradation de la région de grille pouvant provenir de la détérioration d'une structure de grille encastrée résultant d'un défaut de gravure lors de la formation du logement.

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