H - Electricity – 01 – L
Inventor
H - Electricity
01
L
Inventor
Country: United States Of America
Algan/gan hemts having a gate contact on a gan based cap...
Cap layers and/or passivation layers for nitride-based...
Methods of fabricating nitride-based transistors having...
Methods of fabricating nitride-based transistors with a cap...
Methods of fabricating transistors including supported gate...
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Profile ID: LFCA-PAI-P-1349424