Methods of fabricating transistors including supported gate...

Details Methods of fabricating transistors including supported gate... Methods of fabricating transistors including supported gate...

H - Electricity

01

L

H01L 21/338 (2006.01) H01L 29/423 (2006.01) H01L 29/778 (2006.01) H01L 21/335 (2006.01)

Patent

CA 2634068

Transistors are fabricated by forming a protective layer having an opening extending therethrough on a substrate, and forming a gate electrode in the opening. A first portion of the gate electrode laterally extends on surface portions of the protective layer outside the opening, and a second portion of the gate electrode is spaced apart from the protective layer and laterally extends beyond the first portion. Related devices and fabrication methods are also discussed.

Fabrication de transistors par formation de couche de protection ayant une ouverture qui s'étend à travers cette couche, sur un substrat, et par formation d'électrode de grille dans cette ouverture. Une première partie de ladite électrode s'étend latéralement sur des parties de la surface de la couche de protection à l'extérieur de l'ouverture, et une seconde partie de l'électrode de grille est espacée de la couche de protection et s'étend latéralement au-delà de la première partie. L'invention concerne également des dispositifs et des procédés de fabrication connexes.

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