G - Physics – 02 – B
Patent
G - Physics
02
B
G02B 26/08 (2006.01) G02B 6/35 (2006.01)
Patent
CA 2481619
A micro-optic device including a complicate structure and a movable mirror is made to be manufactured in a reduced length of time. A silicon substrate 42 and a single crystal silicon device layer 43 with an intermediate layer 41 of silicon dioxide interposed therebetween defines a substrate 31 on which a layer 44 of mask material is formed (Fig. 14A) and is patterned to form a mask 45 having the same pattern as the configuration of the intended optical device as viewed in plan view. A surface which is to be constructed as a mirror surface is chosen to be (100) plane of the silicon crystal. Using the mask 45, the device layer 43 is vertically etched by a reactive ion dry etching until the intermediate layer 41 is exposed (Fig. 14C). Subsequently, using KOH solution, a wet etching which is anisotropic to the crystallographic orientation is performed with an etching rate which is on the order of 0.1 µm/min for a time interval on the order of ten minutes is performed to convert the sidewall surface of the mirror 4 into a smooth crystallographic surface (100). Subsequently, the intermediate layer 41 is selectively subject to a wet etching to remove the intermediate layer 41 only in an area located below the movable part of the optical device (Fig. 14D).
Hamada Yoshihiko
Imaki Osamu
Kato Yoshichika
Kondou Kenji
Mori Keiichi
Japan Aviation Electronics Industry Limited
Kirby Eades Gale Baker
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