Mis heterojunction structures

Details Mis heterojunction structures Mis heterojunction structures

H - Electricity

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H01L 29/12 (2006.01) H01L 29/207 (2006.01) H01L 29/43 (2006.01) H01L 29/47 (2006.01) H01L 29/49 (2006.01) H01L 29/80 (2006.01) H01L 29/94 (2006.01)

Patent

CA 1125922

MIS HETEROJUNCTION STRUCTURES Abstract of the Disclosure In a metal-insulator-semiconductor (MIS) structure, the I-layer comprises a single-crystal, semi-insulating layer which forms a substantially lattice-matched hetero- junction with the underlying S-layer. Illustratively, the structure, grown by MBE, includes an indirect gap AlGaAs I-layer doped with a deep level impurity such as oxygen, iron or chromium, and a GaAs S-layer. GaAs FETs incorporating this MIS structure are described. CASEY, H. C. 5-16-8

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