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Patent
H - Electricity
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L
H01L 27/10 (2006.01) C23C 14/08 (2006.01) C23C 14/28 (2006.01) H01L 21/02 (2006.01) H01L 27/115 (2006.01)
Patent
CA 2131901
2131901 9405455 PCTABS00030 Modulated-structure polycrystalline or heteroepitaxial multilayers of PZT/PT ferroelectric thin films are deposited on a substrate, preferably by laser ablation. The laser ablation of the PZT/PT layers onto a prepared substrate occurs while maintaining the substrate at a temperature between 380 ·C to about 650 ·C. The target source for the PZT/PT laser ablated film may be either bulk PZT and PT ceramics or powders or individual metal oxides or metal pellets. The ferroelectric thin film device may be used for a random access memory.
Kingon Angus Ian
Varshney Usha
American Research Corporation Of Virginia
Ridout & Maybee Llp
LandOfFree
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